The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Sep. 19, 2017
Semiconductor Manufacturing International (Beijing) Corporation, Beining, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Zhenghao Gan, Shanghai, CN;
Abstract
A method for testing inter-layer connections is presented. The method entails: providing a test semiconductor device, wherein the test semiconductor device comprises a two-port resistance network; measuring base input resistances on at least one of the first and the second ports of the test semiconductor device for different numbers of resistance links in a defect-free circumstance; obtaining a correspondence relationship between the number of resistance links and the base input resistances; measuring actual input resistances on at least one of the first and the second ports of the test semiconductor device; and determining a position of the resistance link corresponding to the actual input resistances based on the correspondence relationship, wherein the position of the resistance link determines the location of a defect. This method can promptly locate a defect in inter-layer components and can reduce test time and simplify test procedures.