The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Sep. 07, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Linggang Fang, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10829 (2013.01); H01L 27/10852 (2013.01); H01L 28/40 (2013.01);
Abstract
A device including a capacitor includes an isolation structure, a first control gate, a first selective gate and a first dielectric layer. The isolation structure is disposed in a substrate. The first control gate and the first selective gate are disposed directly above the isolation structure. The first dielectric layer is vertically sandwiched by the first control gate and the first selective gate, thereby constituting the capacitor. The present invention also provides a method of forming the device including the capacitor.