The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Aug. 31, 2017
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Cheng-Tsung Wu, Taipei, TW;
Shin-Cheng Lin, Tainan, TW;
Yu-Hao Ho, Keelung, TW;
Wen-Hsin Lin, Jhubei, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor structure including a substrate, a first well, a first doped region, a second well, a second doped region, a field oxide, a first conductive layer, a first insulating layer and a second conductive layer is provided. Each of the substrate and the second well has a first conductivity type. The first and second wells are formed in the substrate. The first well has a second conductivity type. The first doped region is formed in the first well and has the second conductivity type. The second doped region is formed in the second well and has the first conductivity type. The field oxide is disposed on the substrate and is disposed between the first and second doped regions. The first conductive layer overlaps the field oxide. The first insulating layer overlaps the first conductive layer. The second conductive layer overlaps the first insulating layer.