The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Dec. 22, 2016
Applicant:
Massachusetts Institute of Technology, Cambridge, MA (US);
Inventors:
Min Sun, Cambridge, MA (US);
Tomas Apostol Palacios, Belmont, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/812 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8122 (2013.01); H01L 21/0254 (2013.01); H01L 29/0657 (2013.01); H01L 29/0676 (2013.01); H01L 29/2003 (2013.01); H01L 29/66666 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/8083 (2013.01); H01L 29/0649 (2013.01);
Abstract
A vertical semiconductor transistor and a method of forming the same. A vertical semiconductor transistor has at least one semiconductor region, a source, and at least one gate region. The at least one semiconductor region includes a III-nitride semiconductor material. The source is formed over the at least one semiconductor region. The at least one gate region is formed around at least a portion of the at least one semiconductor region.