The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
May. 08, 2017
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/735 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/404 (2013.01); H01L 29/0692 (2013.01); H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/735 (2013.01);
Abstract
A semiconductor device is provided. The semiconductor device includes a first doped region and a second doped region of a first conductive type and a third doped region of a second conductive type located in a substrate. The second doped region is located at a side of the first doped region. A top-view pattern of the second doped region has at least one recess portion. The third doped region is located between the first doped region and the second doped region. A top-view pattern of the third doped region has at least one protruded portion corresponding to the at least one recess portion.