The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Dec. 13, 2017
Applicant:
Etron Technology, Inc., Hsinchu, TW;
Inventor:
Li-Ping Huang, Taipei, TW;
Assignee:
Etron Technology, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 29/06 (2006.01); H01L 27/102 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01); H01L 29/745 (2006.01); H01L 29/78 (2006.01); H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1027 (2013.01); H01L 27/102 (2013.01); H01L 27/105 (2013.01); H01L 27/1052 (2013.01); H01L 29/06 (2013.01); H01L 29/068 (2013.01); H01L 29/0673 (2013.01); H01L 29/423 (2013.01); H01L 27/1211 (2013.01); H01L 29/42308 (2013.01); H01L 29/42392 (2013.01); H01L 29/742 (2013.01); H01L 29/7436 (2013.01); H01L 29/7455 (2013.01); H01L 29/7853 (2013.01);
Abstract
A memory circuit with thyristor includes a plurality of memory cells. Each memory cell of the plurality of memory cells includes an access transistor and a thyristor. The thyristor is coupled to the access transistor. At least one of a gate of the access transistor and a gate of the thyristor has a fin structure.