The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Nov. 10, 2017
Applicants:
Yongkyu Lee, Gwacheon-si, KR;
Gwanhyeob Koh, Seoul, KR;
Boyoung Seo, Suwon-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01);
Abstract
A variable resistance memory device includes different variable resistance patterns on different memory regions of a substrate. The different variable resistance patterns may be at different heights from the substrate and may have different intrinsic properties. The different variable resistance patterns may at least partially comprise separate memory cells that are each configured to function as a non-volatile memory cell or a random access memory cell, respectively.