The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

Oct. 25, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Lawrence A. Clevenger, Rhinebeck, NY (US);

Roger A. Quon, Rhinebeck, NY (US);

Hosadurga K. Shobha, Niskayuna, NY (US);

Terry A. Spooner, Clifton Park, NY (US);

Wei Wang, Yorktown Heights, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/3065 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/3065 (2013.01); H01L 21/768 (2013.01); H01L 23/528 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01);
Abstract

A method for fabricating a semiconductor structure includes the following steps. A substrate including a dielectric material is formed. A surface of the substrate is molecularly modified to convert the surface of the substrate to a nitrogen-enriched surface. A metal layer is deposited on the molecularly modified surface of the substrate interacting with the molecularly modified surface to form a nitridized metal layer.


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