The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Feb. 23, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Muneyuki Imai, Yamanashi, JP;
Satoshi Toda, Yamanashi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31056 (2013.01); H01J 37/321 (2013.01); H01J 37/32422 (2013.01); H01L 21/31116 (2013.01); H01L 21/6719 (2013.01); H01L 21/67742 (2013.01); H01L 21/68742 (2013.01); H01L 21/76205 (2013.01); H01L 21/76224 (2013.01); H01J 2237/334 (2013.01);
Abstract
There is disclosed a substrate processing method for etching a substrate on which a first and a second silicon oxide layer having different film qualities are formed side by side. The substrate processing method includes: a first etching step of supplying a halogen-containing gas that is not activated to the substrate and sublimating reaction by-products generated by reaction between the halogen-containing gas and the first and the second silicon oxide layer; and a second etching step of etching the substrate by radicals generated by activating the halogen-containing gas.