The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Dec. 19, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Ravi Keshav Joshi, Klagenfurt, AT;
Romain Esteve, Munich, DE;
Roland Rupp, Lauf, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Gerald Unegg, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/808 (2006.01); H01L 29/861 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0485 (2013.01); H01L 29/0688 (2013.01); H01L 29/0692 (2013.01); H01L 29/0813 (2013.01); H01L 29/1095 (2013.01); H01L 29/41708 (2013.01); H01L 29/42304 (2013.01); H01L 29/45 (2013.01); H01L 29/66068 (2013.01); H01L 29/732 (2013.01); H01L 29/8083 (2013.01); H01L 29/8611 (2013.01); H01L 29/0878 (2013.01); H01L 29/1075 (2013.01); H01L 29/1608 (2013.01); H01L 29/6606 (2013.01); H01L 29/7395 (2013.01); H01L 29/7805 (2013.01); H01L 29/7813 (2013.01); H01L 29/861 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a silicon carbide semiconductor body and a metal contact structure. Interface particles including a silicide kernel and a carbon cover on a surface of the silicide kernel are formed directly between the silicon carbide semiconductor body and the metal contact structure. Between neighboring ones of the interface particles, the metal contact structure directly adjoins the silicon carbide semiconductor body.