The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Jul. 13, 2016
Applicant:
Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;
Inventors:
Hiromasa Saeki, Nagaokakyo, JP;
Noriyuki Inoue, Nagaokakyo, JP;
Takeo Arakawa, Nagaokakyo, JP;
Naoki Iwaji, Nagaokakyo, JP;
Assignee:
MURATA MANUFACTURING CO., LTD., Nagaokakyo-shi, Kyoto-Fu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 9/032 (2006.01); H01G 9/07 (2006.01); H01G 9/00 (2006.01); H01G 9/055 (2006.01); H01G 9/15 (2006.01); H01G 9/04 (2006.01); H01G 9/045 (2006.01); H01G 9/052 (2006.01);
U.S. Cl.
CPC ...
H01G 9/07 (2013.01); H01G 9/0029 (2013.01); H01G 9/0032 (2013.01); H01G 9/032 (2013.01); H01G 9/04 (2013.01); H01G 9/045 (2013.01); H01G 9/052 (2013.01); H01G 9/055 (2013.01); H01G 9/15 (2013.01);
Abstract
A capacitor that includes a porous metal base material, a first buffer layer formed by an atomic layer deposition method on the porous metal base material, a dielectric layer formed by an atomic layer deposition method on the first buffer layer, and an upper electrode formed on the dielectric layer.