The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Dec. 30, 2017
Applicant:
Spin Memory, Inc., Fremont, CA (US);
Inventors:
Mourad El Baraji, Fremont, CA (US);
Kadriye Deniz Bozdag, Sunnyvale, CA (US);
Marcin Jan Gajek, Berkeley, CA (US);
Michail Tzoufras, Sunnyvale, CA (US);
Assignee:
Spin Memory, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01F 10/32 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01F 10/3286 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); G11C 11/1673 (2013.01); H01L 27/222 (2013.01);
Abstract
Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes an external magnetic field generator, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.