The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

May. 30, 2017
Applicant:

Coorstek Kk, Tokyo, JP;

Inventors:

Yuji Fukasawa, Hadano, JP;

Sachiko Kato, Hadano, JP;

Assignee:

COORSTEK KK, Shinagawa-Ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 3/06 (2006.01); C03B 25/02 (2006.01); C03B 27/02 (2006.01); C03C 4/00 (2006.01); C03B 19/14 (2006.01); C03B 27/04 (2006.01); C03B 32/00 (2006.01);
U.S. Cl.
CPC ...
C03C 3/06 (2013.01); C03B 19/1461 (2013.01); C03B 25/02 (2013.01); C03B 27/02 (2013.01); C03B 27/028 (2013.01); C03B 27/04 (2013.01); C03B 32/00 (2013.01); C03C 4/0085 (2013.01); C03B 2201/07 (2013.01); C03B 2201/075 (2013.01); C03B 2201/12 (2013.01);
Abstract

Provided is a silica glass member which exhibits high optical transparency to vacuum ultraviolet light and has a low thermal expansion coefficient of 4.0×10/K or less at near room temperature, particularly a silica glass member which is suitable as a photomask substrate to be used in a double patterning exposure process using an ArF excimer laser (193 nm) as a light source. The silica glass member is used in a photolithography process using a vacuum ultraviolet light source, in which the fluorine concentration is 1 wt % or more and 5 wt % or less, and the thermal expansion coefficient at from 20° C. to 50° C. is 4.0×10/K or less.


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