The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Sep. 17, 2015
Applicant:
Soitec, Bernin, FR;
Inventors:
Oleg Kononchuk, Grenoble, FR;
Didier Landru, Le Champ-près-Froges, FR;
Christophe Figuet, Crolles, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/38 (2015.01); H04B 1/03 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01M 4/66 (2006.01); H01L 21/28 (2006.01); H01L 41/047 (2006.01);
U.S. Cl.
CPC ...
H04B 1/03 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/76254 (2013.01); H01M 4/663 (2013.01); H01L 21/02167 (2013.01); H01L 21/28282 (2013.01); H01L 21/76297 (2013.01); H01L 41/0477 (2013.01);
Abstract
A structure for radiofrequency applications includes: a semiconducting supporting substrate, and a trapping layer arranged on the supporting substrate. The trapping layer includes a higher defect density than a predetermined defect density. The predetermined defect density is the defect density beyond which the electric resistivity of the trapping layer is no lower than 10,000 ohm·cm over a temperature range extending from −20° C. to 120° C.