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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10249767 B1

PDFFull Text
Date of Patent:
Apr. 02, 2019

Filed:

Jun. 15, 2016

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Applicants:

Tamura Corporation, Tokyo, JP;

National Institute of Information and Communications Technology, Tokyo, JP;

Inventors:

Kohei Sasaki, Tokyo, JP;

Masataka Higashiwaki, Tokyo, JP;

Assignees:

TAMURA CORPORATION, Tokyo, JP;

NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATION TECHNOLOGY, Tokyo, JP;

Attorney:

McGinn I.P. Law, Group, PLLC.

Primary Examiner:

Yu Chen

Assistant Examiner:

Vincent Wall

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/15 (2006.01); H01L 29/24 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/772 (2006.01); H01L 29/786 (2006.01); H01L 29/812 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02414 (2013.01); H01L 21/02433 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02581 (2013.01); H01L 21/02631 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/157 (2013.01); H01L 29/24 (2013.01); H01L 29/36 (2013.01); H01L 29/365 (2013.01); H01L 29/41733 (2013.01); H01L 29/66969 (2013.01); H01L 29/772 (2013.01); H01L 29/78 (2013.01); H01L 29/7816 (2013.01); H01L 29/7824 (2013.01); H01L 29/78603 (2013.01); H01L 29/812 (2013.01); H01L 29/8126 (2013.01);
Abstract

A GaO-based semiconductor element includes an undoped β-GaOsingle crystal film disposed on a surface of a β-GaOsubstrate, a source electrode and a drain electrode disposed on a same side of the undoped β-GaOsingle crystal film, a gate electrode disposed on the undoped β-GaOsingle crystal film between the source electrode and the drain electrode, and a region formed in the undoped β-GaOsingle crystal film under the source electrode and the drain electrode and including a controlled dopant concentration.

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