The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Sep. 19, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Christian Bretthauer, Munich, DE;

Bernhard Laumer, Ottobrunn, DE;

Holger Poehle, Taufkirchen, DE;

Momtchil Stavrev, Dresden, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53219 (2013.01); H01L 23/53228 (2013.01); H01L 23/53233 (2013.01); H01L 23/53242 (2013.01); H01L 24/03 (2013.01); H01L 24/45 (2013.01); H01L 23/3171 (2013.01); H01L 2224/034 (2013.01); H01L 2224/03011 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05546 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45164 (2013.01); H01L 2924/3651 (2013.01); H01L 2924/3656 (2013.01);
Abstract

A semiconductor die includes a last metallization layer above a semiconductor substrate, a bond pad above the last metallization layer, a passivation layer covering part of the bond pad and having an opening that defines a contact area of the bond pad, an insulating region separating the bond pad from the last metallization layer at least in an area corresponding to the contact area of the bond pad, and an electrically conductive interconnection structure that extends from the bond pad to the upper metallization layer outside the contact area of the bond pad. Corresponding methods of manufacture are also provided.


Find Patent Forward Citations

Loading…