The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Apr. 20, 2018
International Business Machines Corporation, Armonk, NY (US);
Sanghoon Lee, White Plains, NY (US);
Effendi Leobandung, Stormville, NY (US);
Renee T. Mo, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure is provided that can be used for DNA sequencing detection. The semiconductor structure includes a doped epitaxial source semiconductor material structure located on a first portion of a semiconductor substrate and a doped epitaxial drain semiconductor material structure located on a second portion of the semiconductor substrate. A gate dielectric portion is located on a third portion of the semiconductor substrate and positioned between the doped epitaxial source semiconductor material structure and the doped epitaxial drain semiconductor material structure. A non-stick nucleotide, DNA and DNA polymerase material structure is located atop the doped epitaxial source semiconductor material structure and atop the doped epitaxial drain semiconductor material structure, wherein a cavity is present in the non-stick nucleotide, DNA and DNA polymerase material structure that exposes a topmost surface of the gate dielectric portion.