The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2019

Filed:

Jun. 06, 2017
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Julien Ryckaert, Schaerbeek, BE;

Juergen Boemmels, Heverlee, BE;

Christopher Wilson, Tervuren, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01L 23/528 (2013.01);
Abstract

A method for forming a pattern for an integrated circuit is disclosed. In one aspect, the method includes (a) providing a hardmask layer; (b) overlaying the hard mask layer with a set of parallel material lines delimiting gaps therebetween; and (c) providing a spacer layer following the shape of the material layer. The method further includes (d) removing a top portion of the spacer layer, thereby forming spacer lines alternatively separated by material lines and by gaps; and (e) providing a blocking element in a portion of a gap. The method also includes (f) etching selectively the hard mask layer by using the material layer, the spacer lines and the blocking element as a mask, thereby providing a first set of parallel trenches in the hardmask layer, wherein a trench has a blocked portion; and (g) selectively removing the blocking element.


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