The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

H01L 21/311 (2006.01); H01L 21/306 (2006.01); H01L 21/4757 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 27/11565 (2017.01);

U.S. Cl.

CPC ...

H01L 21/30604 (2013.01); H01L 21/0217 (2013.01); H01L 21/31111 (2013.01); H01L 21/47573 (2013.01); H01L 21/67086 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); H01L 27/11565 (2013.01);

Abstract

Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath.

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