The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Oct. 11, 2017
Applicant:
Asahi Glass Company, Limited, Tokyo, JP;
Inventors:
Hiroshi Hanekawa, Tokyo, JP;
Nobutaka Aomine, Tokyo, JP;
Yuki Aoshima, Tokyo, JP;
Hirotomo Kawahara, Tokyo, JP;
Kazunobu Maeshige, Tokyo, JP;
Assignee:
AGC INC., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); C03C 17/245 (2006.01); C23C 16/40 (2006.01); G02B 1/11 (2015.01); G02B 5/08 (2006.01); G02B 5/20 (2006.01); C03C 17/34 (2006.01); C03C 17/36 (2006.01);
U.S. Cl.
CPC ...
C03C 17/245 (2013.01); C03C 17/3411 (2013.01); C03C 17/36 (2013.01); C03C 17/366 (2013.01); C23C 16/40 (2013.01); G02B 1/11 (2013.01); G02B 5/08 (2013.01); G02B 5/208 (2013.01); C03C 2217/73 (2013.01); C03C 2218/152 (2013.01); C03C 2218/153 (2013.01);
Abstract
A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cmto 3800 cmin a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and the C content of the first layer is 1.64 at % or less.