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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10236390 B1

PDFFull Text
Expired
Date of Patent:
Mar. 19, 2019

Filed:

Jul. 18, 2017

Semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Yasumasa Yamane, Kanagawa, JP;

Motomu Kurata, Kanagawa, JP;

Ryota Hodo, Kanagawa, JP;

Takahisa Ishiyama, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Earl N Taylor

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/105 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/1052 (2013.01); H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1255 (2013.01); H01L 29/4908 (2013.01); H01L 29/513 (2013.01); H01L 29/66969 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device having stable electrical characteristics is provided. Alternatively, a highly reliable semiconductor device suitable for miniaturization or high integration is provided. The semiconductor device includes a first barrier layer, a second barrier layer, a third barrier layer, a transistor including an oxide, an insulator, and a conductor. The insulator includes an oxygen-excess region. The insulator and the oxide are between the first barrier layer and the second barrier layer. The conductor is in an opening of the first barrier layer, an opening of the second barrier layer, and an opening of the insulator with the third barrier layer positioned therebetween.

Find Patent Forward Citations

Yamane, Yasumasa. (2019). Semiconductor device (U.S. Patent No. 10236390). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10236390

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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