The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2019

Filed:

Aug. 25, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yool Kang, Yongin-si, KR;

Kyoung-sil Park, Seongnam-si, KR;

Yun-seok Choi, Hwaseong-si, KR;

Boo-deuk Kim, Suwon-si, KR;

Ye-hwan Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 21/762 (2006.01); H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 27/108 (2006.01); B05D 1/00 (2006.01); B05D 3/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); H01L 21/0271 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/76224 (2013.01); H01L 27/10885 (2013.01); H01L 27/10891 (2013.01); B05D 1/005 (2013.01); B05D 3/0254 (2013.01); B05D 3/0272 (2013.01); H01L 27/10888 (2013.01);
Abstract

A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.


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