The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2019

Filed:

Apr. 11, 2017
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Tuo-Hung Hou, Taichung, TW;

Boris Hudec, Taichung, TW;

Che-Chia Chang, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0097 (2013.01); G11C 13/004 (2013.01); H01L 27/249 (2013.01); H01L 27/2463 (2013.01); H01L 45/10 (2013.01); H01L 45/1226 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1608 (2013.01); G11C 2213/32 (2013.01);
Abstract

A resistive random access memory (RRAM) including a first electrode, a second electrode, and a charge trapping layer is provided. The second electrode is located on the first electrode. The charge trapping layer is located between the first electrode and the second electrode. The charge trapping includes a first region and a second region. The first region has a first dopant and is close to the first electrode. The second region has a second dopant and is close to the second electrode.


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