The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2019
Filed:
Oct. 30, 2017
Applicant:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, Kanagawa, JP;
Inventor:
Naoki Ogawa, Yokohama, JP;
Assignee:
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/343 (2006.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); H01S 5/227 (2006.01); H01S 5/12 (2006.01); H01S 5/22 (2006.01); H01S 5/30 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34313 (2013.01); H01S 5/0206 (2013.01); H01S 5/026 (2013.01); H01S 5/2275 (2013.01); H01S 5/34306 (2013.01); H01S 5/34366 (2013.01); H01S 5/1231 (2013.01); H01S 5/2226 (2013.01); H01S 5/305 (2013.01); H01S 5/3054 (2013.01); H01S 5/3406 (2013.01); H01S 5/3407 (2013.01);
Abstract
A semiconductor laser diode (LD) having an optical grating is disclosed. The LD includes a lower cladding layer that buries the optical grating, an active layer, and an upper cladding layer. The active layer has a multi-quantum well (MQW) structure of barrier layers and well layers alternately arranged. The MQW structure further includes intermediate layers between the barrier layers and the well layers. The intermediate layers have a lattice constant between that of the barrier layers and that of the well layers. Each intermediate layer has a thickness thinner than 1 nm.