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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10230007 B1

PDFFull Text
Date of Patent:
Mar. 12, 2019

Filed:

Jul. 24, 2015

Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure

Applicants:

Tamura Corporation, Tokyo, JP;

National Institute of Information and Communications Technology, Koganei-shi, Tokyo, JP;

Inventors:

Kohei Sasaki, Tokyo, JP;

Akito Kuramata, Tokyo, JP;

Masataka Higashiwaki, Koganei, JP;

Assignees:

TAMURA CORPORATION, Tokyo, JP;

NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, Koganei-Shi, Tokyo, JP;

Attorney:

McGinn I.P. Law Group, PLLC.

Primary Examiner:

Latanya N Crawford

Int. Cl.
CPC ...
H01L 29/872 (2006.01); C30B 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 29/812 (2006.01); H01L 29/12 (2006.01); H01L 29/24 (2006.01); C30B 15/34 (2006.01); C30B 23/02 (2006.01); C30B 23/06 (2006.01); C30B 25/18 (2006.01); C30B 31/22 (2006.01); C30B 33/08 (2006.01); H01L 21/02 (2006.01); H01L 21/425 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); C30B 15/34 (2013.01); C30B 23/025 (2013.01); C30B 23/066 (2013.01); C30B 25/186 (2013.01); C30B 29/16 (2013.01); C30B 31/22 (2013.01); C30B 33/08 (2013.01); H01L 21/02565 (2013.01); H01L 21/425 (2013.01); H01L 29/12 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/78 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/78642 (2013.01); H01L 29/808 (2013.01); H01L 29/812 (2013.01); H01L 21/02414 (2013.01); H01L 21/02433 (2013.01);
Abstract

A semiconductor element includes a base substrate that includes a GaO-based crystal having a thickness of not less than 0.05 μm and not more than 50 μm, and an epitaxial layer that includes a GaO-based crystal and is epitaxially grown on the base substrate. A semiconductor element includes an epitaxial layer that includes a GaO-based crystal including an n-type dopant, an ion implanted layer that is formed on a surface of the epitaxial layer and includes a higher concentration of n-type dopant than the epitaxial layer, an anode electrode connected to the epitaxial layer, and a cathode electrode connected to the ion implanted layer.

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