The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2019

Filed:

Apr. 06, 2016
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Keiji Wada, Itami, JP;

Taro Nishiguchi, Itami, JP;

Toru Hiyoshi, Osaka, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/32 (2006.01); C30B 29/36 (2006.01); H01L 29/16 (2006.01); H01L 21/306 (2006.01); C30B 25/20 (2006.01); H01L 21/02 (2006.01); H01L 29/34 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); C23C 16/56 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/04 (2006.01); C30B 25/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); C23C 16/325 (2013.01); C23C 16/56 (2013.01); C30B 25/02 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); H01L 29/34 (2013.01); H01L 29/408 (2013.01); H01L 29/66068 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 21/02664 (2013.01);
Abstract

A method for manufacturing a silicon carbide epitaxial substrate includes epitaxially growing a first layer on a silicon carbide single crystal substrate, and forming a second layer at an outermost surface of the first layer. The second layer has a chemical composition or density different from that of the first layer. A ratio of a thickness of the second layer to a thickness of the first layer is more than 0% and less than or equal to 10%.


Find Patent Forward Citations

Loading…