The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2019

Filed:

Oct. 02, 2014
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Yuzuru Mizuhara, Tokyo, JP;

Hideyuki Kazumi, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/147 (2006.01); H01J 37/04 (2006.01);
U.S. Cl.
CPC ...
H01J 37/1478 (2013.01); H01J 37/04 (2013.01); H01J 37/147 (2013.01); H01J 2237/0473 (2013.01); H01J 2237/0475 (2013.01); H01J 2237/24592 (2013.01); H01J 2237/2817 (2013.01);
Abstract

With conventional optical axis adjustment, a charged particle beam will not be perpendicularly incident to a sample, affecting the measurements of a pattern being observed. Highly precise measurement and correction of a microscopic inclination angle are difficult. Therefore, in the present invention, in a state where a charged particle beam is irradiated toward a sample, a correction of the inclination of the charged particle beam toward the sample is performed on the basis of secondary electron scanning image information from a reflector plate. From the secondary electron scanning image information, a deviation vector for charged particle beam deflectors is adjusted, causing the charged particle beam to be perpendicularly incident to the sample. At least two stages of charged particle beam deflectors are provided.


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