The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

Jun. 30, 2011
Applicants:

Daniel J. Hoffman, Fort Collins, CO (US);

Daniel Carter, Fort Collins, CO (US);

Karen Peterson, Loveland, CO (US);

Randy Grilley, Pierce, CO (US);

Inventors:

Daniel J. Hoffman, Fort Collins, CO (US);

Daniel Carter, Fort Collins, CO (US);

Karen Peterson, Loveland, CO (US);

Randy Grilley, Pierce, CO (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); C23C 16/517 (2006.01); H01J 37/32 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
H05H 1/46 (2013.01); C23C 16/50 (2013.01); C23C 16/517 (2013.01); H01J 37/3266 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01J 37/32697 (2013.01); H01J 37/32862 (2013.01);
Abstract

This disclosure describes systems, methods, and apparatuses for generating an ionizing electromagnetic field via a remote plasma source such that the field controllably extends through a field projection portion where the field attenuates, to a plasma processing portion where the field is attenuated but still strong enough to sustain a plasma. The plasma has a low voltage and RF energy and can be used for a variety of semiconductor and thin film processing operations including chamber cleaning via radical generation, etching, and deposition.


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