The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Oct. 25, 2017
Globalfoundries Inc., Grand Cayman, KY;
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Aspects of the present disclosure include fabricating integrated circuit (IC) structures using a boron etch-stop layer, and IC structures with a boron-rich region therein. Methods of forming an IC structure according to the present disclosure can include: growing a conductive epitaxial layer on an upper surface of a semiconductor element; forming a boron etch-stop layer directly on an upper surface of the conductive epitaxial layer; forming an insulator on the boron etch-stop layer; forming an opening within the insulator to expose an upper surface of the boron etch-stop layer; annealing the boron etch-stop layer to drive boron into the conductive epitaxial layer, such that the boron etch-stop layer becomes a boron-rich region; and forming a contact to the boron-rich region within the opening, such that the contact is electrically connected to the semiconductor element through at least the conductive epitaxial layer.