The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Mar. 09, 2018
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Naofumi Ohashi, Toyama, JP;
Satoshi Takano, Toyama, JP;
Kazuyuki Toyoda, Toyama, JP;
Shun Matsui, Toyama, JP;
Assignee:
Hitachi Kokusai Electric, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/677 (2006.01); H01L 21/683 (2006.01); F17D 1/04 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67739 (2013.01); F17D 1/04 (2013.01); H01J 37/32449 (2013.01); H01L 21/67017 (2013.01); H01L 21/6719 (2013.01); H01L 21/67103 (2013.01); H01L 21/67173 (2013.01); H01L 21/67248 (2013.01); H01L 21/6838 (2013.01); H01L 21/68742 (2013.01); H01L 21/68792 (2013.01);
Abstract
Described herein is a technique capable of improving the uniformity of device characteristics. According to the technique described herein, there is provided a method of processing a substrate, including: (a) loading a substrate having a patterned hard mask into a process chamber; (b) supplying a metal-containing gas at a first pressure into the process chamber; and (c) supplying an inert gas into the process chamber and storing the metal-containing gas at a second pressure lower than the first pressure after performing (b).