The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Nov. 18, 2016
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Robert D. Clark, Livermore, CA (US);
Kandabara N. Tapily, Mechanicville, NY (US);
Toyko Electron Limited, Tokyo, JP;
Abstract
A semiconductor device containing a metal-insulator-semiconductor (MIS) contact and method of forming are described. The method includes providing a semiconductor substrate containing a contact region, depositing an insulator film on the contact region, the insulator film including a mixed oxide material containing TiOand at least one additional metal oxide. The method further includes depositing a metal-containing electrode layer abutting the insulator film to form a MIS structure, and heat-treating the MIS structure to scavenge oxygen from the TiOto the metal-containing electrode layer to form a MIS contact with oxygen vacancies in the TiO. According to one embodiment the at least one additional metal oxide is selected from HfO, ZrO, AlO, and combinations thereof, and the metal-containing electrode layer is selected from the group consisting of Ti metal, Al metal, Hf metal, Zr metal, Ta metal, Nb metal, and a combination thereof.