The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Mar. 13, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Heng Yang, Ballston Spa, NY (US);
Ahmed Hassan, Halfmoon, NY (US);
Daniel Dechene, Watervliet, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/76816 (2013.01); H01L 21/76837 (2013.01); H01L 21/76885 (2013.01);
Abstract
A single critical mask process flow and associated structure eliminate the formation of narrow polysilicon defects at the ends of polysilicon gate arrays, and obviate the need to implement complicated ground rules and post-design fill methods to avoid generation of the defects.
Quick Actions:
Yang, Heng. (2019). Substantially defect-free polysilicon gate arrays (U.S. Patent No. 10217633). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10217633
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile