The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Aug. 22, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Shun Huang, Hsinchu, TW;
Wai-Kit Lee, Hong Kong, HK;
Ya-Chin Liang, Tainan, TW;
Cheng Hsiao, Hsinchu, TW;
Juan-Yi Chen, Hsinchu, TW;
Li-Chung Hsu, Hsinchu, TW;
Ting-Sheng Huang, Hsinchu County, TW;
Ke-Wei Su, Hsinchu County, TW;
Chung-Kai Lin, Taipei, TW;
Min-Chie Jeng, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for establishing an aging model of a device is provided. The device is measured to obtain degradation information of the device under an operating condition, wherein the device is a physical device. The degradation information is partitioned into a permanent degradation portion and an impermanent degradation portion. The impermanent degradation portion is differentiated by time to obtain a differential value. The aging model is obtained according to the differential value. When the differential value is greater than zero, a degradation of the device increases over time, and when the differential value is less than zero, the degradation of the device decreases over time.