The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
May. 31, 2017
Applicant:
Silicon Storage Technology, Inc., San Jose, CA (US);
Inventors:
Hieu Van Tran, San Jose, CA (US);
Thuan Vu, San Jose, CA (US);
Anh Ly, San Jose, CA (US);
Hung Quoc Nguyen, Fremont, CA (US);
Assignee:
SILICON STORAGE TECHNOLOGY, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G06F 1/26 (2006.01); G06F 1/28 (2006.01); G11C 7/20 (2006.01); G11C 16/30 (2006.01); H03K 19/0185 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G06F 1/266 (2013.01); G06F 1/28 (2013.01); G11C 5/14 (2013.01); G11C 5/143 (2013.01); G11C 5/147 (2013.01); G11C 5/148 (2013.01); G11C 7/20 (2013.01); G11C 16/30 (2013.01); H03K 19/018521 (2013.01); G11C 11/4074 (2013.01);
Abstract
A system and method for improved power sequencing within an embedded flash memory device is disclosed. Various power-on sequences and power-down sequences for a plurality of voltage sources are utilized to improve the performance of an embedded flash memory device. The plurality of voltage sources can be used for different purposes within the embedded flash memory device.