The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Jun. 24, 2015
Applicant:

President and Fellows of Harvard College, Cambridge, MA (US);

Inventors:

Kasey Joe Russell, Cambridge, MA (US);

Tsung-Li Liu, Ashburn, VA (US);

Evelyn L. Hu, Cambridge, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/52 (2006.01); H01L 51/00 (2006.01); H01L 51/50 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5262 (2013.01); H01L 51/0096 (2013.01); H01L 51/5012 (2013.01); H01L 51/52 (2013.01); H01L 51/56 (2013.01); H01L 51/5271 (2013.01); H01L 2251/558 (2013.01);
Abstract

A light emitting device is described that may reduce the coupling of emitted light into silicon and may increase the efficiency with which light is emitted into the far field. Such a device may include a semiconductor layer, a metallic structure, and a light emission layer disposed between the semiconductor layer and the metallic structure. The light emission layer may be in physical contact with the metallic structure and the semiconductor layer. The light emission layer may include at least one fluorescent molecule that emits light upon excitation.


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