The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Jan. 10, 2017
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Eng Huat Toh, Singapore, SG;
Ruchil Kumar Jain, Singapore, SG;
Yongshun Sun, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 33/07 (2006.01); H01L 43/04 (2006.01); H01L 43/06 (2006.01); H01L 43/14 (2006.01);
U.S. Cl.
CPC ...
H01L 43/065 (2013.01); G01R 33/07 (2013.01); H01L 43/04 (2013.01); H01L 43/14 (2013.01);
Abstract
A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; implanting n-type dopant in the first and second n-type wells; and implanting p-type dopant in the p-type well and the first n-type well.