The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Sep. 15, 2017
Qualcomm Incorporated, San Diego, CA (US);
Fabio Alessio Marino, San Marcos, CA (US);
Narasimhulu Kanike, San Diego, CA (US);
Qingqing Liang, San Diego, CA (US);
Francesco Carobolante, San Diego, CA (US);
Paolo Menegoli, San Jose, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Certain aspects of the present disclosure provide a semiconductor capacitor. The semiconductor capacitor generally includes an insulative layer, and a semiconductor region disposed adjacent to a first side of the insulative layer. The semiconductor capacitor also includes a first non-insulative region disposed adjacent to a second side of the insulative layer. In certain aspects, the semiconductor region may include a second non-insulative region, wherein the semiconductor region includes at least two regions having at least one of different doping concentrations or different doping types, and wherein one or more junctions between the at least two regions are disposed above or below the first non-insulative region.