The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Dec. 04, 2017
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Sameer Pendharkar, Allen, TX (US);
Ming-yeh Chuang, McKinney, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/0696 (2013.01); H01L 29/408 (2013.01); H01L 29/42364 (2013.01); H01L 29/42368 (2013.01); H01L 29/66681 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/66689 (2013.01);
Abstract
A power transistor is provided with at least one transistor finger that lies within a semiconductor material. The gate oxide is segmented into a set of segments with thick field oxide between each segment in order to reduce gate capacitance and thereby improve a resistance times gate charge figure of merit.