The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Apr. 28, 2017
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Yannick Baines, Grenoble, FR;
Julien Buckley, Grenoble, FR;
Abstract
The invention relates to a normally-off high-electron-mobility field-effect transistor having a superposition of a first layer of semiconductor material and a second layer of semiconductor material so as form an electron gas layer at the interface between the first and second layers. A trench separates the superposition into first and second domains. An insulating element is positioned in the trench in order to electrically insulate the first and second domains. A p-doped semiconductor element is in contact with the first or the second layer of semiconductor material of the first and second domains, and extends continuously between the first and second domains. A gate insulator is positioned on the semiconductor element and a gate electrode is positioned on the gate insulator.