The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
May. 03, 2017
Applicant:
Global Wafers Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/365 (2013.01); H01L 21/0242 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/0257 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01);
Abstract
A heterostructure includes a substrate; an intermediate layer disposed on the substrate; and a group III-V layer having a first primary surface disposed on the intermediate layer and a dopant concentration that varies in a manner including a plurality of ramps with at least one of increasing dopant concentration and decreasing dopant concentration, along the growth direction from the first primary surface throughout the layer's thickness before terminating in a second primary surface.