The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Jun. 30, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Chieh Fang, Zhongpu Township, Chiayi County, TW;

Ming-Chi Wu, Kaohsiung, TW;

Ji-Heng Jiang, Tainan, TW;

Chi-Yuan Wen, Tainan, TW;

Chien-Nan Tu, Kaohsiung, TW;

Yu-Lung Yeh, Kaohsiung, TW;

Shih-Shiung Chen, Tainan, TW;

Kun-Yu Lin, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14629 (2013.01); H01L 27/14621 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01);
Abstract

An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.


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