The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Feb. 21, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yui Nakaoka, Tokyo, JP;

Hirobumi Matsui, Tokyo, JP;

Shinichi Hosomi, Tokyo, JP;

Yuji Kawano, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Chiyoda-ku, Tokyo, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 2224/03019 (2013.01); H01L 2224/03502 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/05684 (2013.01);
Abstract

A pad electrode such that a conductive film is used as the pad electrode in a semiconductor device has an object of preventing Al corrosion and improving Au bonding wire durability. A semiconductor device according to the invention includes a conductive film of Al or having Al as a main component on which a signal processing circuit and a pad electrode portion are formed, a metal film formed on the conductive film, and a protective film formed on the metal film, wherein a metal film region in which atoms derived from the metal film are implanted is formed on a surface of the conductive film exposed by an opening formed in one portion of the protective film and the metal film, and adopted as the pad electrode.


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