The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Jul. 05, 2017
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Globalfoundries Inc., Cayman Islands, KY;

Inventors:

Hiroaki Niimi, Cohoes, NY (US);

Shariq Siddiqui, Albany, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Assignees:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 21/02244 (2013.01); H01L 21/285 (2013.01); H01L 21/28512 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H01L 21/32134 (2013.01); H01L 21/32136 (2013.01); H01L 21/7684 (2013.01); H01L 21/7685 (2013.01); H01L 21/76814 (2013.01); H01L 21/76831 (2013.01); H01L 21/76846 (2013.01); H01L 21/76855 (2013.01); H01L 21/76858 (2013.01); H01L 21/76865 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 21/76895 (2013.01); H01L 21/823814 (2013.01); H01L 21/823871 (2013.01); H01L 23/485 (2013.01); H01L 23/535 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 27/092 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/41725 (2013.01); H01L 29/45 (2013.01); H01L 29/7848 (2013.01); H01L 21/02252 (2013.01); H01L 21/02255 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 23/53223 (2013.01); H01L 23/53252 (2013.01); H01L 29/165 (2013.01); H01L 29/41783 (2013.01); H01L 29/665 (2013.01); H01L 29/66628 (2013.01);
Abstract

An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.


Find Patent Forward Citations

Loading…