The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Nov. 03, 2017
International Business Machines Corporation, Armonk, NY (US);
Matthew J. BrightSky, Armonk, NY (US);
Robert L. Bruce, White Plains, NY (US);
John M. Papalia, New York, NY (US);
HsinYu Tsai, San Jose, CA (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Embodiments of the invention are directed to methods and resulting structures for forming a storage element using phase change memory (PCM). In a non-limiting embodiment of the invention, a PCM layer is formed over a surface of a bottom electrode. A top electrode is formed over the PCM layer using a tone inversion process that includes a sacrificial layer. A PCM pillar is then formed by patterning the PCM layer to expose a surface of the bottom electrode. The tone inversion process enables a sub-50 nm PCM pillar diameter.