IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10211044 B1

PDFFull Text
Date of Patent:
Feb. 19, 2019

Filed:

Mar. 02, 2016

Method for manufacturing ferroelectric thin film device

Applicant:

Sumitomo Chemical Company, Limited, Tokyo, JP;

Inventors:

Fumimasa Horikiri, Hitachi, JP;

Kenji Shibata, Hitachi, JP;

Kazutoshi Watanabe, Hitachi, JP;

Kazufumi Suenaga, Tokyo, JP;

Assignee:

SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Khaja Ahmad

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01); H01L 21/78 (2006.01); H01L 37/02 (2006.01); H01L 41/187 (2006.01); H01L 41/29 (2013.01); H01L 49/02 (2006.01); H01L 41/332 (2013.01); H01L 21/3213 (2006.01); H01L 27/11507 (2017.01); H01L 41/314 (2013.01); H01L 41/047 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02197 (2013.01); H01L 21/02266 (2013.01); H01L 21/31111 (2013.01); H01L 21/32136 (2013.01); H01L 21/78 (2013.01); H01L 22/26 (2013.01); H01L 27/11507 (2013.01); H01L 28/55 (2013.01); H01L 28/65 (2013.01); H01L 37/025 (2013.01); H01L 41/187 (2013.01); H01L 41/1873 (2013.01); H01L 41/29 (2013.01); H01L 41/314 (2013.01); H01L 41/332 (2013.01); H01L 21/32139 (2013.01); H01L 28/60 (2013.01); H01L 41/0477 (2013.01);
Abstract

This method for manufacturing a ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a sodium potassium niobate on the lower electrode film; an upper electrode film formation step of forming an upper electrode film on the ferroelectric thin film; and an upper electrode film etching step of shaping the upper electrode film into a desired micro-pattern by performing a reactive ion etching process on the upper electrode film. The upper electrode film etching step is a step of calculating a rate of change of sodium emission intensity in an ion plasma generated by the reactive ion etching process and determining that the etching process is completed when the rate of change falls below a predetermined threshold.

Find Patent Forward Citations

Loading…