The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Dec. 19, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Chishio Koshimizu, Yamanashi, JP;

Jun Yamawaku, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32183 (2013.01); H01J 37/32091 (2013.01);
Abstract

Disclosed is a plasma processing method for generating plasma between an upper electrode connected with a VF power supply and a susceptor disposed to face the upper electrode to perform a plasma processing on a wafer by the plasma. The plasma processing method includes: providing an auxiliary circuit configured to reduce a difference between a reflection minimum frequency of a first route where a high frequency current generated from the VF power supply flows before ignition of the plasma and a reflection minimum frequency of a second route where the high frequency current generated from the VF power supply flows after the ignition of the plasma; igniting the plasma; and maintaining the plasma.


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