The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Mar. 07, 2018
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Tohru Toda, Yokkaichi, JP;

Keisuke Izumi, Yokkaichi, JP;

Michiaki Sano, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/52 (2006.01); G03F 9/00 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); H01L 21/66 (2006.01); G03F 7/20 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
G03F 9/7034 (2013.01); G03F 7/2004 (2013.01); G03F 7/2039 (2013.01); G03F 7/705 (2013.01); G03F 7/70483 (2013.01); G03F 7/70525 (2013.01); G03F 7/70641 (2013.01); G03F 7/70775 (2013.01); G03F 9/7026 (2013.01); H01L 21/0273 (2013.01); H01L 21/67259 (2013.01); H01L 21/76816 (2013.01); H01L 22/12 (2013.01);
Abstract

Pattern-dependent random deviations in measurement of optimal focus distances can be minimized by separating scan paths into multiple types of scan paths that scan only a respective predetermined image region in semiconductor dies. A substrate including in-process semiconductor dies is coated with a photoresist layer, and is located onto a stage in a lithographic exposure tool. Maps of optimal focus distances are generated by performing optimal focus distance scans that cover a respective subset of image regions having distinct image patterns. The substrate can be leveled with respect to an optics system of the lithographic exposure tool employing a weighted average of multiple maps of optimal focus distances. Once the substrate is leveled on the stage, a lithographic exposure process can be performed with enhanced uniformity in the focus distances across the in-process semiconductor dies.


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