The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Nov. 21, 2017
Applicant:

Hitachi Power Semiconductor Device, Ltd., Hitachi-shi, Ibaraki, JP;

Inventors:

Tetsuya Ishimaru, Tokyo, JP;

Mutsuhiro Mori, Tokyo, JP;

Shinichi Kurita, Hitachi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 7/06 (2006.01); H02M 3/335 (2006.01); H02M 7/219 (2006.01); H02J 7/14 (2006.01); H02K 11/04 (2016.01); H02M 1/08 (2006.01); H02M 7/217 (2006.01);
U.S. Cl.
CPC ...
H02H 7/067 (2013.01); H02J 7/14 (2013.01); H02K 11/046 (2013.01); H02M 1/08 (2013.01); H02M 3/33592 (2013.01); H02M 7/217 (2013.01); H02M 7/219 (2013.01); H02M 2007/2195 (2013.01);
Abstract

A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.


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