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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10204986 B1

PDFFull Text
Date of Patent:
Feb. 12, 2019

Filed:

Oct. 13, 2017

Semiconductor device and manufacturing method thereof

Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Rung-Yuan Lee, New Taipei, TW;

Chun-Tsen Lu, Tainan, TW;

Kuan-Hung Chen, Taichung, TW;

Assignee:

United Microelectronics Corp., Hsinchu, TW;

Attorney:

J.C. Patents

Primary Examiner:

Walter H Swanson

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/41 (2006.01); H01L 29/417 (2006.01); H01L 23/535 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 29/786 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0676 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/84 (2013.01); H01L 23/535 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/413 (2013.01); H01L 29/41733 (2013.01); H01L 29/41741 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78642 (2013.01);
Abstract

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a semiconductor nanowire, a gate structure, a first metal nanowire and a second metal nanowire. The semiconductor nanowire is disposed vertically on the substrate. The gate structure surrounds a middle portion of the semiconductor nanowire. The first metal nanowire is located on a side of the semiconductor nanowire and is electronically connected to a lower portion of the semiconductor nanowire. The second metal nanowire is located on the other side of the semiconductor nanowire and is electronically connected to the gate structure.

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