The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Jun. 08, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chia-Yu Wei, Tainan, TW;

Chin-Hsun Hsiao, Kaohsiung, TW;

Yi-Hsing Chu, Tainan, TW;

Yen-Liang Lin, Tainan, TW;

Yung-Lung Hsu, Tainan, TW;

Hsin-Chi Chen, Tainan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01);
Abstract

A semiconductor structure includes a semiconductive substrate includes a first side and a second side opposite to the first side, a radiation sensing device disposed in the semiconductive substrate, an interlayer dielectric (ILD) disposed over the first side of the semiconductive substrate, and a conductive pad disposed in the semiconductive substrate and the ILD, wherein a thickness of the conductive pad is less than a sum of a thickness of the semiconductive substrate and a thickness of the ILD.


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